Alloy diode on a single chip N-type germanium or silicon PN junction is formed by adding the production of indium alloy, aluminum and other metal approach. Forward voltage drop is small, 55C series diodes, suitable for high current rectification. PN junction reverse its large capacitance, therefore suitable for the detection of high-frequency and high-frequency rectification. Diffusion type diode P-type impurity gas temperature, the heating unit N-type germanium or silicon wafer, so that a single wafer surface into the P-type, this method PN junction. PN junction forward voltage drop due to small, diodes, suitable for high current rectification. Recently, the use of high-current rectifiers mainstream has been transferred to the silicon-silicon alloy type diffusion. Production methods mesa type diode PN junction diffusion although the same, but only keep the PN junction and the necessary parts, the unnecessary portions etched away using drugs. The remaining part will be presented mesa shape, hence the name. Initial production of the mesa type semiconductor material is made of using a diffusion method. So, again this mesa called diffusion mesa. For this type, it seems that a large current rectifier product model is small, and low current switching product model, but a lot. Measuring positive and negative resistance with a multimeter R × 1k or R × 10k file, measuring diac positive and negative resistance. Normally its positive and negative resistance should be infinity. If the measured positive and negative resistance values ??are very small or 0, it shows that the diode breakdown. Measuring voltage measuring diac turn turning voltage There are three ways. The first method is: the positive megger (E) and negative (L), respectively, then the diac both ends, with a Megger provides a breakdown voltage while measuring the voltage value of the DC voltage profile with a multimeter, DIAC will then measured once the poles reversed. Compare the bias voltage value of the two measurements (usually 3 ~ 6V). This deviation is smaller, the better the performance of the diode. The second method is: first with a multimeter measure the mains voltage U, and the measured way trigger diode string into the multimeter's AC voltage measuring circuit, the access mains voltage, read voltage value U1, then the diac and read voltage values ??U2 poles reversed after connection. If the voltage value U1 and U2 are the same, but with different voltage values ??U, then the bidirectional trigger diode conduction properties with good symmetry. If U1 and U2 voltage value difference is large, it indicates that the bidirectional trigger diode continuity asymmetry. If U1, U2 voltage values ??are with the mains U are the same, it indicates that the DIAC internally short-circuit damage. If U1, U2 voltage values ??are 0V, the description of the diac internal open damaged. The third method is: 0 ~ 50V continuously adjustable DC power supply, the power of positive series with a 20kΩ resistor after the end of the two-way trigger diode phase, the negative power supply series multimeter current file (which is set at 1mA file) after the two-way trigger the other end of the diode phase. Gradually increase the power supply voltage, a more obvious when the ammeter pointer swing (tens of microamps or more), then this has been a two-way trigger diode turns on, then the power supply voltage that is the breakover voltage of the diac. Figure 4-73 is a bidirectional detection voltage diode turn trigger. Alloy diode on a single chip N-type germanium or silicon PN junction is formed by adding the production of indium alloy, aluminum and other metal approach. Forward voltage drop is small, suitable for high current rectification. PN junction reverse its large capacitance, therefore suitable for the detection of high-frequency and high-frequency rectification. Diffusion type diode P-type impurity gas temperature and heated single wafer N-type germanium or silicon, 1N47 series diode, so that a single wafer surface into a P-type, this method PN junction. Because PN junction forward voltage drop is small, suitable for high current rectification. Recently, the use of high-current rectifiers mainstream has been transferred to the silicon-silicon alloy type diffusion. Production methods mesa type diode PN junction diffusion although the same, but only keep the PN junction and the necessary parts, the unnecessary portions etched away using drugs. The remaining part will be presented mesa shape, hence the name. Initial production of the mesa type semiconductor material is made of using a diffusion method. So, again this mesa called diffusion mesa. For this type, it seems that a large current rectifier product model is small, and low current switching product model, but a lot. 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