Reverse recovery time trr: refers to reverse the specified load, maximum forward current and reverse voltage transient recovery time. Zero bias capacitance CO: refers to the voltage across the diode is zero, diffusion capacity of the capacitor and the junction capacitance and. It is noteworthy that, due to the manufacturing process, even if the same type of diode parameters of discrete also great. Parameters given in the manual is often a range, if the test conditions are changed, the corresponding parameters will change, for example, at 25 ° C measured 1N5200 Series plastic silicon rectifier diode IR less than 10uA, and at 100 ° C when IR then becomes less than 500uA. IF --- Forward Current (positive test current). Under the provisions of the germanium detector diode forward voltage VF, the current between electrodes through; silicon rectifier tube, silicon reactor under specified conditions, the diode, the maximum allowed by the operating current continuous sine half wave (average) Maximum forward current silicon switching diodes at rated power allowed to pass; measuring the forward voltage diode electrical parameters given current rectifier diode (rectifier diode) for alternating current into direct current semiconductor devices. The most important characteristic of the diode is conductive in one direction. In the circuit, the current can only flow into the diode from the positive and negative outflow. It typically contains a PN junction with two positive and negative terminals. The structure shown in FIG. P region carrier is a hole, the carrier N region is an electronic, in the P region and the N range to form a certain barrier. Plus the P-region relative to N region is positive voltage, 2A diode barrier is lowered, resulting in storage position on both sides of the carrier near the barrier, 3A diodes, through high current, low voltage drop (typically 0.7V ), known as the forward conduction state. If the increase in the reverse voltage, the barrier increases, can withstand high reverse voltage, reverse current flow through a small (known as reverse leakage current), called the reverse blocking state. Rectifier diode has obvious way conductivity. Available rectifier diode semiconductor germanium or silicon and other materials. High breakdown voltage silicon rectifier diode, rectifier diodes, reverse leakage current, good temperature performance. Usually high-voltage power rectifier diodes with high-purity single-crystal silicon (doped more easily reverse breakdown). This device is a large junction area, by a large current (up to thousands of security), but the operating frequency is not high, usually in the tens of kilohertz or less. Rectifier diode is mainly used for a variety of low-frequency half-wave rectifier circuit, and if necessary to achieve the full-wave rectifier bridge rectifier connected into use. 6A diodes, diode, gold credit provided by Qingdao integrity Technology Co., Ltd. Qingdao integrity Technology Co., Ltd. (www.qdjcx.com) strong, credible, in Qingdao, Shandong diode industry has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead gold credit into the brilliant and you work for a better future!